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Thursday, September 2, 2021 | History

4 edition of Modeling of metal-ferroelectric-semiconductor field effect transistors found in the catalog.

Modeling of metal-ferroelectric-semiconductor field effect transistors

Modeling of metal-ferroelectric-semiconductor field effect transistors

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Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, D.C, Springfield, Va .
Written in English

    Subjects:
  • Ferroelectric materials,
  • Field effect transistors,
  • Hysteresis,
  • Electric potential,
  • Current density,
  • Mathematical models

  • Edition Notes

    Other titlesModeling of metal ferroelectric semiconductor field effect transistors.
    StatementTodd C. MacLeod, Fat Duen Ho.
    SeriesNASA/TM -- 207907., NASA technical memorandum -- 207907.
    ContributionsHo, Fat Duen., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL17580161M
    OCLC/WorldCa41247581


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Modeling of metal-ferroelectric-semiconductor field effect transistors Download PDF EPUB FB2

A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented. Two important structures such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMISFET) are considered.

A new analytic expression for Cited by: Abstract: A drain-current model has been developed for ferroelectric metal-oxide-semiconductor field-effect transistors by coupling Pao-Sah double integral with the nonlinear Landau description of the field and polarization of ferroelectric insulators.

The resultant solution for surface potential ψ s versus gate voltage V g consists of double hysteresis loops sensitive to the ferroelectric Cited by: Device Modeling of Ferroelectric Memory Field-Effect Transistor (FeMFET) Hang-Ting Lue, Chien-Jang Wu, Member, IEEE, and Tseung-Yuen Tseng, Fellow, IEEE Abstract- A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented.

Two important structures such as the metal. An improved theoretical model for metalferroelectricmetalinsulatorsemiconductor field-effect transistors (MFMIS FETs) is presented.

The basic theory describing the ferroelectric behavio. presence of the depolarization field and capacitive divider due to the metal-ferroelectric-insulator-semiconductor (MFIS) gate stack, the ferroelectric operates along minor loops [22, 23].

Therefore, we develop a ferroelectric switching model that accounts for history, voltage, time dependence, and minor loop trajectories (figure 2(b)). Cited by:   The operation of the ferroelectric nonvolatile memory field effect transistor is theoretically examined extensively for the first time.

The ferroelectric transistor device properties are derived by combining the silicon chargesheet model of metaloxidesemiconductor fieldeffect transistor device operation with Maxwells first equation which describes the properties of the.

Highlights The surface potential and drain current of field-effect transistor were investigated. The ferroelectric negative capacitance was considered in this investigation. A low subthreshold swing S 34. Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal-insulator-semiconductor gate stack structures using HfZr0.

The continued reduction in the dimensions of metaloxidesemiconductor field-effect transistors (MOSFETs) leads to insurmountable power dissipation when the feature size enters the nanoscale regime.

1) The primary reason is that the subthreshold swing (SS) cannot be lowered to sub mVdecade for conventional MOSFETs at room temperature (RT), which is known as the. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor material.

1. Introduction. In recent years, negative capacitance has been widely studied in both organic and inorganic semiconductor devices,. It is well-known that conventional field-effect transistors (FETs) require a change in the channel potential of at least 60 mV at room temperature to induce a change in the current by a factor of This minimum subthreshold slope S puts a.

We fabricate a ferroelectric field effect transistor (FeFET) based on a semiconducting vanadium dioxide (VO 2) nanowire (NW), and we investigate its electron transport characteristics modulated by the ferroelectric transistor consists of a single VO 2 NW as the channel and a ferroelectric Pb(Zr Ti )O 3 (PZT) thin film as the dielectric gate.

Charge injection at the metalorganic contact is one of the most crucial issues in the development of organic field-effect transistors (OFETs).

1,2 1. Liu, Y. Xu, and Y. Noh, Mater. When initiating this book on the tunneling eld-effect tran- L. Zhang and M. Chan (eds. ), Tunneling Field Effect Transistor Technology, DOI _1 1 (IC) has increased four orders, while price per transistor or roughly cost paid to one plementary metal-oxide-semiconductor (CMOS) technology.

Considering wide. on ferroelectric hafnium oxide (HfO2) since this material's ferroelectric properties were discovered in ," Halid Mulaosmanovic, one of the researchers who carried out the study, told TechXplore.

"An attractive electronic device that can be made using this material is a ferroelectric field-effect transistor (FeFET), which resembles. The classic metaloxidesemiconductor field-effect transistor (MOSFET) is the workhorse of the microelectronics industry. MOSFETs are the building blocks of microprocessors, memory chips and.

InSalahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance (NC) region could act as a step-up converter of the surface potential in a metal-oxide-semiconductor structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S lt;; 60mVdec).

In this paper, a comprehensive physics-based surface. Saeidi, A.Biswas, A.Ionescu, A. : Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric. Solid State Electron.() Google Scholar Cross Ref.

  P-type channel metal-ferroelectric-insulator-silicon field-effect transistors (FETs) with a nm thick SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric film and a 10 nm thick HfTaO layer on silicon substrate were fabricated and characterized.

The prepared FeFETs were then subjected to {sup 60}Co. Field-effect transistors as tunable infrared detectors.

Full Record; Other Related Research; Abstract. We present a theory of tunable infrared response in field-effect transistors. The linear {alpha}({omega}) and second-order {beta}({omega}) polarizability are calculated numerically as functions of frequency of an applied electric field. Effects of Nootropic Drug Modulated Monoaminergic Neurotransmission on Hippocampal and Cortical Convulsions.

G Modification and Metallization of Bulk Materials and Particles. Modeling and Investigation of Characteristics of Solid-State Converters of Neutron Radiation for Increasing the Registration Efficiency of Detectors. T In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands).

Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large. The first section of this introductory book takes readers through the historical development and motivation of the field of crystal growth.

With more than 40 years of experience in the field, the author covers nucleation, two-dimensional layer growth mechanism, defects in crystals, and screw dislocation theory of crystal growth.

The semiconductor device according to claim 2, further comprising a second metal oxide film in contact with the oxide semiconductor film, wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.